منابع مشابه
Sub - 50 nm P - Channel FinFET
High-performance PMOSFETs with sub-50–nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-...
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High Q frequency reference devices are essential components in many Integrated circuits. This paper will focus on the Resonant Suspended Gate (RSG) MOSFET. The gate in this structure has been designed to resonate at 38.4MHz. The MOSFET in this device has a retrograde channel to achieve high output current. For this purpose, abrupt retrograde channel and Gaussian retrograde channels have bee...
متن کاملThreshold Voltage Roll-Off Due to Channel Length Reduction for a Nanoscale n-channel FinFET
Abstract: As the device feature size enters into the nanoscale, the modeling and simulation of short channel effects in FinFETs devices become challenging. In this paper an easy approach to model short channel effects threshold voltage roll-off in nanoscale n-channel FinFETs is presented. The decrease of threshold voltage with decrease in gate length is a well-known short channel effect called ...
متن کاملA Qualitative Approach on FinFET Devices Characteristics
FinFET devices are comprehensively investigated owing to the projection for application in the CMOS integrated circuits fabrication. Deducing MOSFET size have great influence on electrostatic characteristic.The indiscriminate variations of the characteristics lead to a divergence effect which is imperative from the point of view of design and manufacture. In this paper different types of the po...
متن کاملFinFET Circuit Design
Fin-type field-effect transistors (FinFETs) are promising substitutes for bulk CMOS at the nanoscale. FinFETs are double-gate devices. The two gates of a FinFET can either be shorted for higher perfomance or independently controlled for lower leakage or reduced transistor count. This gives rise to a rich design space. This chapter provides an introduction to various interesting FinFET logic des...
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ژورنال
عنوان ژورنال: Sensors and Materials
سال: 2018
ISSN: 0914-4935
DOI: 10.18494/sam.2018.2054